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IPD640N06LG
規(guī)格信息：

制造商:Infineon

產(chǎn)品種類:MOSFET

RoHS:是

商標(biāo):Infineon Technologies

Id-連續(xù)漏極電流:18 A

Vds-漏源極擊穿電壓:60 V

Rds On-漏源導(dǎo)通電阻:64 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :20 V

最大工作溫度:+ 175 C

Pd-功率耗散:47 W

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:DPAK-3

封裝:Reel

通道模式:Enhancement

配置:Single

下降時間:32 ns

最小工作溫度:- 55 C

上升時間:25 ns

系列:IPD640N06

工廠包裝數(shù)量:2500

商標(biāo)名:OptiMOS

典型關(guān)閉延遲時間:32 ns

典型接通延遲時間:6 ns

零件號別名:IPD640N06LGBTMA1 IPD640N06LGXT SP000443766

IPD640N06LG

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
IPD640N06LG	OptiMOS?? Power-Transistor	INFINEON[Infineon Technologies AG]	352.81 Kbytes	共9頁	IPD230N06NG,IPB048N06LG,IPD350N06LG,IPB050N06NG,IPD400N06NG,IPB065N06LG,IPD800N06NG,IPB070N06LG,IPP80N04S2-04,IPB070N06NG	產(chǎn)品購買
IPD640N06LG	OptiMOS?? Power-Transistor Features For fast switching converters and sync. rectification	INFINEON[Infineon Technologies AG]	509.41 Kbytes	共9頁		產(chǎn)品購買
IPD640N06LG_08	OptiMOS?? Power-Transistor Features For fast switching converters and sync. rectification	INFINEON[Infineon Technologies AG]	509.41 Kbytes	共9頁		產(chǎn)品購買
IPD640N06LGBTMA1	MOSFET N-CH 60V 18A TO-252	Infineon Technologies	993.58 Kbytes	共9頁		產(chǎn)品購買