封裝/外殼:PG-TO252-3
安裝風(fēng)格:SMD/SMT
通道數(shù)量:1Channel
晶體管極性:N-Channel
Vds-漏源極擊穿電壓:600V
Id-連續(xù)漏極電流:10.6A
Rds On-漏源導(dǎo)通電阻:340mOhms
Vgs th-柵源極閾值電壓:2.5V
Vgs - 柵極-源極電壓:20V
Qg-柵極電荷:32nC
最小工作溫度:-55C
最大工作溫度:+150C
配置:Single
Pd-功率耗散:83W
通道模式:Enhancement
高度:2.3mm
長(zhǎng)度:6.5mm
系列:XPD60R380
晶體管類(lèi)型:1N-Channel
寬度:6.22mm
下降時(shí)間:8ns
上升時(shí)間:9ns
典型關(guān)閉延遲時(shí)間:56ns
典型接通延遲時(shí)間:11ns
Packing Type:TAPE & REEL
Moisture Level:1
RDS (on) max:380.0m?
IDpuls max:30.0A
VDS max:600.0V
ID max:10.6 A
RthJC max:1.5 K/W
QG (typ @10V):32.0 nC
Package:DPAK (TO-252)
Budgetary Price ?€/1k:0.79
Operating Temperature min:-55.0°C
Ptot max:83.0W
Polarity:N
Pin Count:3.0Pins
RthJA max:62.0K/W
VGS(th) min max:2.5 V 3.5 V
Mounting:SMT
無(wú)鉛情況/RoHs:無(wú)鉛/符合RoHs
IPD60R380E6
| 型號(hào) | 功能描述 | 生產(chǎn)廠(chǎng)商 | 廠(chǎng)商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|---|---|---|
| IPD60R380E6 | Metal Oxide Semiconductor Field Effect Transistor | INFINEON[Infineon Technologies AG] | 1004.16 Kbytes | 共18頁(yè) | 產(chǎn)品購(gòu)買(mǎi) | ||||
| IPD60R380E6 | isc N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | 323.05 Kbytes | 共2頁(yè) | 產(chǎn)品購(gòu)買(mǎi) | ||||
| IPD60R380E6ATMA2 | IPD60R380 - COOLMOS N-CHANNEL | Infineon Technologies | 943.49 Kbytes | 共18頁(yè) | 產(chǎn)品購(gòu)買(mǎi) | ||||
| IPD60R380E6ATMA2 | MOSFET N-CH 600V 10.6A TO252-3 | Infineon Technologies | 943.49 Kbytes | 共18頁(yè) | 產(chǎn)品購(gòu)買(mǎi) | ||||
| IPD60R380E6BTMA1 | MOSFET N-CH 600V 10.6A TO252-3 | Infineon Technologies | 943.49 Kbytes | 共18頁(yè) | 產(chǎn)品購(gòu)買(mǎi) | ||||
| IPD60R380E6BTMA1 | MOSFET N-CH 600V 10.6A TO252-3 | Infineon Technologies | 943.49 Kbytes | 共18頁(yè) | 產(chǎn)品購(gòu)買(mǎi) |
關(guān)注官方微信

天天IC網(wǎng)由深圳市四方好訊科技有限公司獨(dú)家運(yùn)營(yíng)
天天IC網(wǎng) ( www.meandmyfour.com ) 版權(quán)所有?2014-2025 粵ICP備15059004號(hào)