| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
| IPD600N25N3 | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/572ISC.GIF) | 336.23 Kbytes | 共2頁 |  | |
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| IPD600N25N3 G | 連續(xù)漏極電流(Id)(25°C 時):25A 漏源電壓(Vdss):250V 柵源極閾值電壓:4V @ 90?A 漏源導(dǎo)通電阻:60mΩ @ 25A, 10V 最大功率耗散(Ta=25°C):136W(Tc) 類型:N溝道 | Infineon(英飛凌) |  | 486.80 Kbytes | 共9頁 |  | |
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| IPD600N25N3G | OptiMOSTM3 Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 313.22 Kbytes | 共9頁 |  | |
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| IPD600N25N3G | OptiMOSTM3 Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 492.43 Kbytes | 共9頁 |  | |
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| IPD600N25N3G_11 | OptiMOSTM3 Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 492.43 Kbytes | 共9頁 |  | |
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| IPD600N25N3GATMA1 | MOSFET MV POWER MOS | Infineon Technologies |  | 432.72 Kbytes | 共9頁 |  | |
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| IPD600N25N3GATMA1 | MOSFET N-CH 250V 25A TO252-3 | Infineon Technologies |  | 486.80 Kbytes | 共9頁 |  | |
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| IPD600N25N3GBTMA1 | MOSFET N-CH 250V 25A TO252-3 | Infineon Technologies |  | 486.80 Kbytes | 共9頁 |  | |
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產(chǎn)品購買
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