| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買 |
| IPD053N08N3 | High frequency switching | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/572ISC.GIF) | 336.44 Kbytes | 共2頁(yè) |  | |
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| IPD053N08N3 G | | Infineon(英飛凌) |  | 345.95 Kbytes | 共9頁(yè) | | |
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| IPD053N08N3G | OptiMOS3 Power-Transistor | INFINEON[Infineon Technologies AG] | | 196.24 Kbytes | 共9頁(yè) | | |
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| IPD053N08N3G | OptiMOS??3 Power-Transistor | INFINEON[Infineon Technologies AG] | | 351.65 Kbytes | 共9頁(yè) | | |
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| IPD053N08N3G_14 | OptiMOS??3 Power-Transistor | INFINEON[Infineon Technologies AG] | | 351.65 Kbytes | 共9頁(yè) | | |
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| IPD053N08N3GATMA1 | MOSFET MV POWER MOS | Infineon Technologies | | 330.10 Kbytes | 共9頁(yè) | | |
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| IPD053N08N3GATMA1 | MOSFET N-CH 80V 90A TO252-3 | Infineon Technologies | | 345.95 Kbytes | 共9頁(yè) | | |
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| IPD053N08N3GATMA1 | 連續(xù)漏極電流（Id）（25°C 時(shí)）：90A(Tc) 漏源電壓（Vdss）：80V 柵源極閾值電壓：3.5V @ 90uA 漏源導(dǎo)通電阻：5.3mΩ @ 90A,10V 最大功率耗散（Ta=25°C）：150W(Tc) 類型：N溝道 | Infineon(英飛凌) | | 345.95 Kbytes | 共9頁(yè) | | |
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| IPD053N08N3GBTMA1 | MOSFET N-CH 80V 90A TO252-3 | Infineon Technologies | | 345.95 Kbytes | 共9頁(yè) | | |
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產(chǎn)品購(gòu)買
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