Current - Continuous Drain (Id) @ 25° C:90A
Drain to Source Voltage (Vdss):30V
FET Feature:Logic Level Gate
FET Type:MOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs:38nC @ 10V
Input Capacitance (Ciss) @ Vds:3900pF @ 15V
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max:79W
Rds On (Max) @ Id, Vgs:4 mOhm @ 30A, 10V
Supplier Device Package:PG-TO252-3
Vgs(th) (Max) @ Id:2.2V @ 250μA
包裝:3TO-252
通道模式:Enhancement
最大漏源電壓:30 V
最大連續(xù)漏極電流:90 A
RDS -于:4@10V mOhm
最大門源電壓:±20 V
工作溫度:-55 to 175 °C
安裝:Surface Mount
標(biāo)準(zhǔn)包裝:Tape & Reel