| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
| IPD200N15N3 | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/572ISC.GIF) | 335.43 Kbytes | 共2頁 |  | |
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| IPD200N15N3 G | 連續(xù)漏極電流(Id)(25°C 時(shí)):50A(Tc) 漏源電壓(Vdss):150V 柵源極閾值電壓:4V @ 90uA 漏源導(dǎo)通電阻:20mΩ @ 50A,10V 最大功率耗散(Ta=25°C):150W(Tc) 類型:N溝道 | Infineon(英飛凌) |  | 993.60 Kbytes | 共12頁 |  | |
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| IPD200N15N3G | N-channel, normal level | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 999.3 Kbytes | 共12頁 |  | |
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| IPD200N15N3G | OptiMOSa?¢3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 556.24 Kbytes | 共12頁 |  | |
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| IPD200N15N3G_15 | N-channel, normal level | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 999.3 Kbytes | 共12頁 |  | |
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| IPD200N15N3GATMA1 | MOSFET MV POWER MOS | Infineon Technologies |  | 976.89 Kbytes | 共12頁 |  | |
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| IPD200N15N3GATMA1 | MOSFET N-CH 150V 50A TO252-3 | Infineon Technologies |  | 993.59 Kbytes | 共12頁 |  | |
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產(chǎn)品購買
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| IPD200N15N3GBTMA1 | MOSFET N-CH 150V 50A TO252-3 | Infineon Technologies |  | 993.59 Kbytes | 共12頁 |  | |
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產(chǎn)品購買
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