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DMN601TK
規(guī)格信息：

制造商:Diodes Incorporated

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:300 mA

Vds-漏源極擊穿電壓:60 V

Rds On-漏源導通電阻:2000 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :20 V

最大工作溫度:+ 150 C

Pd-功率耗散:150 mW

安裝風格:SMD/SMT

封裝 / 箱體:SOT-523-3

商標:Diodes Incorporated

通道模式:Enhancement

配置:Single

最小工作溫度:- 65 C

系列:DMN601T

DMN601TK

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
DMN601TK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	272.47 Kbytes	共4頁	FDP7030L,NDP4060,NDP6051,NDP710A,NDS8410S,NDS9957,CEFF640,CEM8410,CEP6030L,CEP7060L	產(chǎn)品購買
DMN601TK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	141.83 Kbytes	共4頁		產(chǎn)品購買
DMN601TK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	411.92 Kbytes	共6頁		產(chǎn)品購買
DMN601TK_09	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	141.83 Kbytes	共4頁		產(chǎn)品購買
DMN601TK_15	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	458.94 Kbytes	共6頁		產(chǎn)品購買
DMN601TK_17	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	411.92 Kbytes	共6頁		產(chǎn)品購買
DMN601TK-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	272.47 Kbytes	共4頁	FDP7030L,NDP4060,NDP6051,NDP710A,NDS8410S,NDS9957,CEFF640,CEM8410,CEP6030L,CEP7060L	產(chǎn)品購買
DMN601TK-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	141.83 Kbytes	共4頁		產(chǎn)品購買