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DMN601DWK
規(guī)格信息：

制造商:Diodes Incorporated

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:305 mA

Vds-漏源極擊穿電壓:60 V

Rds On-漏源導(dǎo)通電阻:2000 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :20 V

最大工作溫度:+ 150 C

Pd-功率耗散:200 mW

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:SOT-363-6

商標(biāo):Diodes Incorporated

通道模式:Enhancement

配置:Dual

最小工作溫度:- 65 C

系列:DMN601D

DMN601DWK

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
DMN601DWK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	131.43 Kbytes	共4頁	FDS9936A,AO8810,AO4812,AO4902,NDS9936,CEM9936,AO8814,AO4904,NDS9945,CED3055L3	產(chǎn)品購買
DMN601DWK_07	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	202.34 Kbytes	共4頁		產(chǎn)品購買
DMN601DWK_15	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	436.19 Kbytes	共6頁		產(chǎn)品購買
DMN601DWK-7	Dual N-Channel MOSFET	TYSEMI[TY Semiconductor Co., Ltd]	109.25 Kbytes	共1頁		產(chǎn)品購買
DMN601DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	131.43 Kbytes	共4頁	FDS9936A,AO8810,AO4812,AO4902,NDS9936,CEM9936,AO8814,AO4904,NDS9945,CED3055L3	產(chǎn)品購買
DMN601DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	202.34 Kbytes	共4頁		產(chǎn)品購買
DMN601DWKQ-7	MOSFET MOSFET BVDSS: 41V-60V	Diodes Incorporated	562.18 Kbytes	共7頁		產(chǎn)品購買
DMN601DWKQ-7	MOSFET N-CHAN 41V 60V SOT363	Diodes Incorporated	574.35 Kbytes	共7頁		產(chǎn)品購買