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DMN601K
規(guī)格信息：

制造商:Diodes Incorporated

產品種類:MOSFET

Id-連續(xù)漏極電流:300 mA

Vds-漏源極擊穿電壓:60 V

Rds On-漏源導通電阻:2000 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :20 V

最大工作溫度:+ 150 C

Pd-功率耗散:350 mW

安裝風格:SMD/SMT

封裝 / 箱體:SOT-23-3

商標:Diodes Incorporated

通道模式:Enhancement

配置:Single

最小工作溫度:- 65 C

系列:DMN601K

DMN601K

型號	功能描述	生產廠商	PDF大小	PDF頁數(shù)	相關型號	產品購買
DMN601K	Low Gate Threshold Voltage	TYSEMI[TY Semiconductor Co., Ltd]	104.84 Kbytes	共1頁		產品購買
DMN601K	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	272.76 Kbytes	共4頁	FDP7030L,NDP4060,NDP6051,NDP710A,NDS8410S,NDS9957,CEFF640,CEM8410,CEP6030L,CEP7060L	產品購買
DMN601K	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	191.82 Kbytes	共4頁		產品購買
DMN601K_08	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	191.82 Kbytes	共4頁		產品購買
DMN601K_15	N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	180.36 Kbytes	共5頁		產品購買
DMN601K-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	272.76 Kbytes	共4頁	FDP7030L,NDP4060,NDP6051,NDP710A,NDS8410S,NDS9957,CEFF640,CEM8410,CEP6030L,CEP7060L	產品購買
DMN601K-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	191.82 Kbytes	共4頁		產品購買
DMN601K-7-F	Product specification	TYSEMI[TY Semiconductor Co., Ltd]	342.06 Kbytes	共1頁		產品購買