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�a(ch��n)Ʒ�N�:MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:SMD/SMT
���b / ���w:TO-263-3
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:650 V
Id-�B�m(x��)©�O���:31.2 A
Rds On-©Դ��(d��o)ͨ���:99 mOhms
Vgs th-��Դ�O�ֵ늉�:3.5 V
Vgs - �ŘO-Դ�O늉�:20 V
Qg-�ŘO늺�:118 nC
��С�����ض�:- 40 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:277.8 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:CoolMOS
���b:Cut Tape
���b:MouseReel
���b:Reel
�߶�:4.4 mm
�L(zh��ng)��:10 mm
ϵ��:CoolMOS CFDA
���w�����:1 N-Channel
����:9.25 mm
�̘�(bi��o):Infineon Technologies
�½��r(sh��)�g:6 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:11 ns
���S���b��(sh��)��:1000
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:68 ns
���ͽ�ͨ���t�r(sh��)�g:16 ns
���̖(h��o)�e��:IPB65R110CFDAATMA1 IPB65R11CFDAXT SP000896402