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IPB60R600P6
規(guī)格信息：

封裝/外殼：PG-TO263-3

Packing Type：TAPE & REEL

RDS (on) max：600.0m?

IDpuls max：18.0A

VDS max：600.0V

ID max：7.3A

Package：D2PAK (TO-263)

Rth：2.0K/W

QG：12.0nC

Budgetary Price ?€/1k：0.46

Ptot max：63.0W

Polarity：N

Pin Count：3.0Pins

Operating Temperature min max：-55.0°C 150.0°C

RthJA max：62.0K/W

Mounting：SMT

VGS(th) min max：3.5V 4.5V

無(wú)鉛情況/RoHs：無(wú)鉛/符合RoHs

IPB60R600P6

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	產(chǎn)品購(gòu)買
IPB60R600P6	Metal Oxide Semiconductor Field Effect Transistor	INFINEON[Infineon Technologies AG]	2409.22 Kbytes	共19頁(yè)	產(chǎn)品購(gòu)買
IPB60R600P6	Metal Oxide Semiconductor Field Effect Transistor	INFINEON[Infineon Technologies AG]	2855.36 Kbytes	共19頁(yè)	產(chǎn)品購(gòu)買
IPB60R600P6	Isc N-Channel MOSFET Transistor	ISC[Inchange Semiconductor Company Limited]	189.2 Kbytes	共2頁(yè)	產(chǎn)品購(gòu)買
IPB60R600P6_15	Metal Oxide Semiconductor Field Effect Transistor	INFINEON[Infineon Technologies AG]	2409.22 Kbytes	共19頁(yè)	產(chǎn)品購(gòu)買
IPB60R600P6ATMA1	MOSFET LOW POWER_PRICE/PERFORM	Infineon Technologies	2.94 Mbytes	共19頁(yè)	產(chǎn)品購(gòu)買
IPB60R600P6ATMA1	MOSFET N-CH 600V 7.3A D2PAK	Infineon Technologies	2.47 Mbytes	共18頁(yè)	產(chǎn)品購(gòu)買