������:Diodes Incorporated
�a(ch��n)Ʒ�N�:MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:SMD/SMT
���b / ���w:SOT-26-6
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:20 V
Id-�B�m(x��)©�O���:5.4 A
Rds On-©Դ��(d��o)ͨ���:40 mOhms
Vgs th-��Դ�O�ֵ늉�:1 V
Vgs - �ŘO-Դ�O늉�:8 V
Qg-�ŘO늺�:14.5 nC
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:1.7 W
����:Single
ͨ��ģʽ:Enhancement
���b:Cut Tape
���b:MouseReel
���b:Reel
�߶�:1.3 mm
�L(zh��ng)��:3.1 mm
�a(ch��n)Ʒ:MOSFET Small Signal
ϵ��:ZXMN2
���w�����:1 N-Channel
����:1.8 mm
�̘�(bi��o):Diodes Incorporated
�½��r(sh��)�g:6.2 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:6.2 ns
���S���b��(sh��)��:3000
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:33.9 ns
���ͽ�ͨ���t�r(sh��)�g:4.2 ns
�����:15 mg