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IPC302N25N3
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Packing Typeï¿½ï¿½WAFER SAWN

Technologyï¿½ï¿½OptiMOS? 3

Budgetary Price ?ï¿½/1kï¿½ï¿½2.45

Modeï¿½ï¿½Enhancement

VGS(th) min maxï¿½ï¿½2.0V 4.0V

VDSï¿½ï¿½250 V

RDS (on)ï¿½ï¿½16.0m?

Die Size (Y)ï¿½ï¿½6.7 mm

Die Size (X)ï¿½ï¿½4.5 mm

Thicknessï¿½ï¿½250

Die Size (Area)ï¿½ï¿½30.15 mm2

EAS/Avalanche Energyï¿½ï¿½40.0mJ

ï¿½oï¿½Uï¿½ï¿½r/RoHsï¿½ï¿½ï¿½oï¿½U/ï¿½ï¿½ï¿½ï¿½RoHs

IPC302N25N3

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IPC302N25N3	Power MOS Transistor Chip	INFINEON[Infineon Technologies AG]		114.04 Kbytes	ï¿½ï¿½3ï¿½				ï¿½a(chï¿½ï¿½n)Æ·Ùï¿½I
IPC302N25N3A	N-channel enhancement mode	INFINEON[Infineon Technologies AG]		593.69 Kbytes	ï¿½ï¿½4ï¿½				ï¿½a(chï¿½ï¿½n)Æ·Ùï¿½I

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