| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買 |
| FDG6316 | P-Channel 1.8V Specified PowerTrench MOSFET | FAIRCHILD[Fairchild Semiconductor] | ![FAIRCHILD[Fairchild Semiconductor]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/51FAIRCHILD.GIF) | 149.58 Kbytes | 共5頁(yè) |  | SI3445DV,FDC604P,SI3447DV,FDC606P,SI4467DY,FDC6312P,SI6467DQ,FDC6318P,FDD306P,FDG326P |
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| FDG6316P | High performance trench technology for extremely low RDS(ON) | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/975TYSEMI.GIF) | 259.38 Kbytes | 共2頁(yè) |  | |
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| FDG6316P | P-Channel 1.8V Specified PowerTrench MOSFET | FAIRCHILD[Fairchild Semiconductor] | ![FAIRCHILD[Fairchild Semiconductor]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/51FAIRCHILD.GIF) | 149.58 Kbytes | 共5頁(yè) |  | SI3445DV,FDC604P,SI3447DV,FDC606P,SI4467DY,FDC6312P,SI6467DQ,FDC6318P,FDD306P,FDG326P |
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| FDG6316P | Dual P-Channel 20 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1674.92 Kbytes | 共7頁(yè) |  | |
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