������:Texas Instruments
�a(ch��n)Ʒ�N�:MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:SMD/SMT
���b / ���w:VSONP-8
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:100 V
Id-�B�m(x��)©�O���:14.4 A
Rds On-©Դ��(d��o)ͨ���:61 mOhms
Vgs th-��Դ�O�ֵ늉�:3.2 V
Vgs - �ŘO-Դ�O늉�:20 V
Qg-�ŘO늺�:4.3 nC
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:2.8 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:NexFET
���b:Cut Tape
���b:MouseReel
���b:Reel
�߶�:0.9 mm
�L(zh��ng)��:3.15 mm
ϵ��:CSD19538Q3A
���w�����:1 N-Channel
����:3 mm
�̘�(bi��o):Texas Instruments
�½��r(sh��)�g:2 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:3 ns
���S���b��(sh��)��:2500
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:7 ns
���ͽ�ͨ���t�r(sh��)�g:5 ns