������:Diodes Incorporated
�a(ch��n)Ʒ�N�:MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:SMD/SMT
���b / ���w:SO-8
ͨ����(sh��)��:2 Channel
���w�ܘO��:N-Channel, P-Channel
Vds-©Դ�O����늉�:30 V
Id-�B�m(x��)©�O���:6.4 A
Rds On-©Դ��(d��o)ͨ���:35 mOhms
Vgs - �ŘO-Դ�O늉�:20 V
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:2.1 W
����:Dual
ͨ��ģʽ:Enhancement
���b:Cut Tape
���b:MouseReel
���b:Reel
�߶�:1.5 mm
�L��:5 mm
ϵ��:ZXMC3
���w�����:1 N-Channel, 1 P-Channel
���:MOSFET
����:4 mm
�̘�(bi��o):Diodes Incorporated
�½��r(sh��)�g:9.4 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:6.4 ns
���S���b��(sh��)��:500
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:21.6 ns
���ͽ�ͨ���t�r(sh��)�g:3 ns
�����:74 mg