������:IXYS
�a(ch��n)Ʒ�N�:MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:Through Hole
���b / ���w:TO-247-3
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:550 V
Id-�B�m(x��)©�O���:36 A
Rds On-©Դ��(d��o)ͨ���:160 mOhms
Vgs - �ŘO-Դ�O늉�:30 V
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:500 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:HyperFET
���b:Tube
�߶�:21.46 mm
�L��:16.26 mm
ϵ��:IXFH36N55
���w�����:1 N-Channel
����:5.3 mm
�̘�(bi��o):IXYS
�½��r(sh��)�g:15 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:18 ns
���S���b��(sh��)��:30
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:54 ns
���ͽ�ͨ���t�r(sh��)�g:17 ns
�����:6.500 g