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PSMN009-100P
規(guī)格信息：

制造商:NXP

產(chǎn)品種類:MOSFET

RoHS:是

商標(biāo):NXP Semiconductors

Id-連續(xù)漏極電流:75 A

Vds-漏源極擊穿電壓:100 V

Rds On-漏源導(dǎo)通電阻:8.8 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :20 V

最大工作溫度:+ 175 C

Pd-功率耗散:230 W

安裝風(fēng)格:Through Hole

封裝 / 箱體:TO-220-3

封裝:Rail

通道模式:Enhancement

配置:Single

下降時(shí)間:43 ns

最小工作溫度:- 55 C

上升時(shí)間:59 ns

工廠包裝數(shù)量:50

典型關(guān)閉延遲時(shí)間:120 ns

典型接通延遲時(shí)間:38 ns

零件號(hào)別名:PSMN009-100P,127

PSMN009-100P

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	相關(guān)型號(hào)	產(chǎn)品購(gòu)買(mǎi)
PSMN009-100P	N-channel TrenchMOS SiliconMAX standard level FET	NXP[NXP Semiconductors]	190.7 Kbytes	共13頁(yè)		產(chǎn)品購(gòu)買(mǎi)
PSMN009-100P	N-channel enhancement mode field-effect transistor	PHILIPS[NXP Semiconductors]	271.41 Kbytes	共13頁(yè)	PHP45N03LTA,PSMN165-200K,BSH111,PH1955L,PHP47NQ10T,SI2302DS,PSMN008-75P,PSMN002-25P,PHP54N06T,SI2304DS	產(chǎn)品購(gòu)買(mǎi)
PSMN009-100P,127	MOSFET RAIL PWR-MOS	Nexperia	758.92 Kbytes	共14頁(yè)		產(chǎn)品購(gòu)買(mǎi)
PSMN009-100P,127	MOSFET N-CH 100V 75A TO220AB	Nexperia USA Inc.	771.74 Kbytes	共14頁(yè)		產(chǎn)品購(gòu)買(mǎi)
PSMN009-100P,127		Nexperia(安世)	771.74 Kbytes	共14頁(yè)		產(chǎn)品購(gòu)買(mǎi)