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FQB8N60C
規(guī)格信息：

制造商:Fairchild Semiconductor

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:7.5 A

Vds-漏源極擊穿電壓:600 V

Rds On-漏源導(dǎo)通電阻:1.2 Ohms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :30 V

最大工作溫度:+ 150 C

Pd-功率耗散:3.13 W

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:D2PAK-3

商標(biāo):Fairchild Semiconductor

通道模式:Enhancement

配置:Single

下降時間:64.5 ns

最小工作溫度:- 55 C

1000 上升時間:60.5 ns

系列:FQB8N60C

典型關(guān)閉延遲時間:81 ns

典型接通延遲時間:16.5 ns

FQB8N60C

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
FQB8N60C	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	644.54 Kbytes	共9頁	STP4NM60,FQAF19N60,FQP7N60,SSW1N60B,FCH47N60,FQP3N60C,STS1HNK60,FQB12N60,FQPF12N60,SSW2N60B	產(chǎn)品購買
FQB8N60C	N-Channel QFET?? MOSFET 600 V, 7.5 A, 1.2 ??	FAIRCHILD[Fairchild Semiconductor]	804.09 Kbytes	共9頁		產(chǎn)品購買
FQB8N60CF	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	708.03 Kbytes	共8頁	FCP4N60,FCD7N60,STB10NK60Z,STW45NM60,STB11NM60FD,STW26NM60,FCP16N60,UK2996,FCD4N60	產(chǎn)品購買
FQB8N60CFTM	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	708.03 Kbytes	共8頁	FCP4N60,FCD7N60,STB10NK60Z,STW45NM60,STB11NM60FD,STW26NM60,FCP16N60,UK2996,FCD4N60	產(chǎn)品購買
FQB8N60CTM	N-Channel QFET?? MOSFET 600 V, 7.5 A, 1.2 ??	FAIRCHILD[Fairchild Semiconductor]	804.09 Kbytes	共9頁		產(chǎn)品購買
FQB8N60CTM-WS	MOSFET N-CH 600V 7.5A	ON Semiconductor	881.13 Kbytes	共10頁		產(chǎn)品購買