制造商:Infineon
產(chǎn)品種類:MOSFET
RoHS:是
技術(shù):Si
安裝風(fēng)格:SMD/SMT
封裝 / 箱體:TDSON-8
通道數(shù)量:1 Channel
晶體管極性:N-Channel
Vds-漏源極擊穿電壓:40 V
Id-連續(xù)漏極電流:100 A
Rds On-漏源導(dǎo)通電阻:1 mOhms
Vgs th-柵源極閾值電壓:1.2 V
Vgs - 柵極-源極電壓:10 V
Qg-柵極電荷:95 nC
最小工作溫度:- 55 C
最大工作溫度:+ 150 C
Pd-功率耗散:139 W
配置:Single
通道模式:Enhancement
商標(biāo)名:OptiMOS
封裝:Cut Tape
封裝:MouseReel
封裝:Reel
高度:1.27 mm
長(zhǎng)度:5.9 mm
系列:OptiMOS 5
晶體管類型:1 N-Channel
寬度:5.15 mm
商標(biāo):Infineon Technologies
正向跨導(dǎo) - 最小值:140 S
開發(fā)套件:EVAL-600W-12V-LLC-A, EVAL_600W_12V_LLC_CFD7, EVAL_600W_12V_LLC_P7, KIT_600W_LLC_DI_CTRL
下降時(shí)間:9 ns
產(chǎn)品類型:MOSFET
上升時(shí)間:12 ns
工廠包裝數(shù)量:5000
子類別:MOSFETs
典型關(guān)閉延遲時(shí)間:46 ns
典型接通延遲時(shí)間:10 ns
零件號(hào)別名:BSC010N04LSATMA1 SP000928282
單位重量:100 mg
BSC010N04LS
| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買 |
|---|---|---|---|---|---|---|---|---|---|
| BSC010N04LS | New OptiMOSa?¢ 40V and 60V | INFINEON[Infineon Technologies AG] | 1021.74 Kbytes | 共2頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LS | Metal Oxide Semiconductor Field Effect Transistor | INFINEON[Infineon Technologies AG] | 1645.68 Kbytes | 共14頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LS_14 | Metal Oxide Semiconductor Field Effect Transistor | INFINEON[Infineon Technologies AG] | 1645.68 Kbytes | 共14頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LS6 | OptiMOSTM 6 Power-Transistor, 40 V | INFINEON[Infineon Technologies AG] | 1477.35 Kbytes | 共12頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LS6ATMA1 | MOSFET N-CH 40V 40A/100A TDSON | Infineon Technologies | 1.44 Mbytes | 共12頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSATMA1 | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | Infineon Technologies | 1.28 Mbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSATMA1 | MOSFET N-CH 40V 100A TDSON-8 | Infineon Technologies | 1.28 Mbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSATMA1 | MOSFET N-CH 40V 38A/100A TDSON | Infineon Technologies | 1.28 Mbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSATMA1 | 連續(xù)漏極電流(Id)(25°C 時(shí)):38A 漏源電壓(Vdss):40V 柵源極閾值電壓:2V @ 250uA 漏源導(dǎo)通電阻:1mΩ @ 50A,10V 最大功率耗散(Ta=25°C):2.5W 類型:N溝道 | Infineon(英飛凌) | 1.61 Mbytes | 共14頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSC | OptiMOSTM5 Power-Transistor, 40V | INFINEON[Infineon Technologies AG] | 1143.75 Kbytes | 共12頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSI | New OptiMOSa?¢ 40V and 60V | INFINEON[Infineon Technologies AG] | 1021.74 Kbytes | 共2頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSI | OptiMOSTM Power-MOSFET, 40 V | INFINEON[Infineon Technologies AG] | 1628.13 Kbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSI_16 | OptiMOSTM Power-MOSFET, 40 V | INFINEON[Infineon Technologies AG] | 1628.13 Kbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSIATMA1 | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | Infineon Technologies | 1.33 Mbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSIATMA1 | MOSFET N-CH 40V 37A/100A TDSON | Infineon Technologies | 1.33 Mbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LST | OptiMOSTM Power-MOSFET, 40 V | INFINEON[Infineon Technologies AG] | 1437.18 Kbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | Infineon Technologies | 1.31 Mbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 | ||||
| BSC010N04LSTATMA1 | MOSFET N-CH 40V 39A/100A TDSON | Infineon Technologies | 1.31 Mbytes | 共13頁(yè) | 產(chǎn)品購(gòu)買 |
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