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BSB044N08NN3G
規(guī)格信息：

制造商:Infineon

產(chǎn)品種類:MOSFET

RoHS:是

Id-連續(xù)漏極電流:90 A

Vds-漏源極擊穿電壓:80 V

Rds On-漏源導通電阻:4.4 mOhms

晶體管極性:N-Channel

封裝 / 箱體:WDSON-2

封裝:Reel

商標:Infineon Technologies

系列:OptiMOS 3

工廠包裝數(shù)量:5000

商標名:OptiMOS

零件號別名:BSB044N08NN3GXT BSB044N08NN3GXUMA1 SP000604542

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	產(chǎn)品購買
BSB044N08NN3G	n-Channel Power MOSFET	INFINEON[Infineon Technologies AG]	1614.02 Kbytes	共13頁	產(chǎn)品購買
BSB044N08NN3G	Material Content Data Sheet	INFINEON[Infineon Technologies AG]	32.54 Kbytes	共1頁	產(chǎn)品購買
BSB044N08NN3G	OptiMOSa?￠3 Power-MOSFET	INFINEON[Infineon Technologies AG]	902.44 Kbytes	共11頁	產(chǎn)品購買
BSB044N08NN3G_11	OptiMOSa?￠3 Power-MOSFET	INFINEON[Infineon Technologies AG]	902.44 Kbytes	共11頁	產(chǎn)品購買
BSB044N08NN3G_15	Material Content Data Sheet	INFINEON[Infineon Technologies AG]	32.54 Kbytes	共1頁	產(chǎn)品購買
BSB044N08NN3GXUMA1	MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3	Infineon Technologies	891.53 Kbytes	共11頁	產(chǎn)品購買
BSB044N08NN3GXUMA1	MOSFET N-CH 80V 18A WDSON-2	Infineon Technologies	896.86 Kbytes	共11頁	產(chǎn)品購買
BSB044N08NN3GXUMA1	MOSFET N-CH 80V 18A/90A 2WDSON	Infineon Technologies	896.86 Kbytes	共11頁	產(chǎn)品購買