������:IXYS
�a(ch��n)Ʒ�N�(l��i):MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:Through Hole
���b / ���w:TO-264-3
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:900 V
Id-�B�m(x��)©�O���:24 A
Rds On-©Դ��(d��o)ͨ���:450 mOhms
Vgs - �ŘO-Դ�O늉�:20 V
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:500 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:HyperFET
���b:Tube
�߶�:26.16 mm
�L(zh��ng)��:19.96 mm
ϵ��:IXFK24N90
���w���(l��i)��:1 N-Channel
����:5.13 mm
�̘�(bi��o):IXYS
�½��r(sh��)�g:12 ns
�a(ch��n)Ʒ�(l��i)��:MOSFET
�����r(sh��)�g:21 ns
���S���b��(sh��)��:25
���(l��i)�e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:60 ns
���ͽ�ͨ���t�r(sh��)�g:25 ns
�����:10 g