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RoHS:��
���g(sh��):Si
���b�L(f��ng)��:Through Hole
���b / ���w:TO-220-3
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���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:100 V
Id-�B�m(x��)©�O���:74 A
Rds On-©Դ��(d��o)ͨ���:12 mOhms
Vgs - �ŘO-Դ�O늉�:20 V
��С�����ض�:- 55 C
������ض�:+ 175 C
Pd-���ʺ�ɢ:170 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:PowerTrench
���b:Tube
�߶�:16.3 mm
�L��:10.67 mm
ϵ��:FDP120N10
���w�����:1 N-Channel
����:4.7 mm
�̘�(bi��o):ON Semiconductor / Fairchild
�½��r(sh��)�g:15 ns
�a(ch��n)Ʒ���:MOSFET
�����r(sh��)�g:105 ns
���S���b��(sh��)��:800
��e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:39 ns
���ͽ�ͨ���t�r(sh��)�g:27 ns
�����:1.800 g