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�a(ch��n)Ʒ�N�:IGBT ģ�K
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�a(ch��n)Ʒ:IGBT Silicon Modules
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��늘O���l(f��)��O���늉� VCEO:1200 V
��늘O����O�늉�:2.6 V
��25 C���B�m(x��)��늘O���:570 A
�ŘO����O©й���:400 nA
Pd-���ʺ�ɢ:2250 W
���b / ���w:62 mm
��С�����ض�:- 40 C
������ض�:+ 125 C
���b:Tray
�߶�:36.5 mm
�L��:106.4 mm
����:61.4 mm
�̘�(bi��o):Infineon Technologies
���b�L(f��ng)��:Chassis Mount
�ŘO/�l(f��)��O���늉�:20 V
�a(ch��n)Ʒ���:IGBT Modules
���S���b��(sh��)��:10
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���̖�e��:BSM300GA120DLCHOSA1 SP000100731