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IRF630
規(guī)格信息：

制造商:STMicroelectronics

產品種類:MOSFET

RoHS:是

技術:Si

安裝風格:Through Hole

封裝 / 箱體:TO-220-3

通道數量:1 Channel

晶體管極性:N-Channel

Vds-漏源極擊穿電壓:200 V

Id-連續(xù)漏極電流:9 A

Rds On-漏源導通電阻:400 mOhms

Vgs th-柵源極閾值電壓:2 V

Vgs - 柵極-源極電壓:10 V

Qg-柵極電荷:31 nC

最小工作溫度:- 65 C

最大工作溫度:+ 150 C

Pd-功率耗散:75 W

配置:Single

通道模式:Enhancement

高度:9.15 mm

長度:10.4 mm

系列:IRF630

晶體管類型:1 N-Channel

類型:MOSFET

寬度:4.6 mm

商標:STMicroelectronics

正向跨導 - 最小值:3 S

產品類型:MOSFET

上升時間:15 ns

工廠包裝數量:1000

子類別:MOSFETs

典型接通延遲時間:10 ns

單位重量:330 mg

介紹圖IRF630
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