| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
| IPB107N20N3 | isc N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/572ISC.GIF) | 244.58 Kbytes | 共2頁 |  | |
 |
產(chǎn)品購買
|
| IPB107N20N3 G | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | Infineon Technologies |  | 630.20 Kbytes | 共11頁 | | |
 |
產(chǎn)品購買
|
| IPB107N20N3 G | 連續(xù)漏極電流（Id）（25°C 時）：88A(Tc) 漏源電壓（Vdss）：200V 柵源極閾值電壓：4V @ 270uA 漏源導(dǎo)通電阻：10.7mΩ @ 88A,10V 最大功率耗散（Ta=25°C）：300W(Tc) 類型：N溝道 | Infineon(英飛凌) | | 690.41 Kbytes | 共11頁 | | |
 |
產(chǎn)品購買
|
| IPB107N20N3G | OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | INFINEON[Infineon Technologies AG] | | 452.77 Kbytes | 共11頁 | | |
 |
產(chǎn)品購買
|
| IPB107N20N3G | OptiMOS 3 Power-Transistor | INFINEON[Infineon Technologies AG] | | 739.46 Kbytes | 共11頁 | | |
 |
產(chǎn)品購買
|
| IPB107N20N3G | OptiMOSTM3 Power-Transistor | INFINEON[Infineon Technologies AG] | | 696.05 Kbytes | 共11頁 | | |
 |
產(chǎn)品購買
|
| IPB107N20N3G_10 | OptiMOS 3 Power-Transistor | INFINEON[Infineon Technologies AG] | | 739.46 Kbytes | 共11頁 | | |
|
產(chǎn)品購買
|
| IPB107N20N3G_11 | OptiMOSTM3 Power-Transistor | INFINEON[Infineon Technologies AG] | | 696.05 Kbytes | 共11頁 | | |
 |
產(chǎn)品購買
|
| IPB107N20N3GATMA1 | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | Infineon Technologies | | 630.20 Kbytes | 共11頁 | | |
|
產(chǎn)品購買
|
| IPB107N20N3GATMA1 | MOSFET N-CH 200V 88A TO263-3 | Infineon Technologies | | 690.41 Kbytes | 共11頁 | | |
|
產(chǎn)品購買
|
| IPB107N20N3GATMA1 | MOSFET N-CH 200V 88A D2PAK | Infineon Technologies | | 690.41 Kbytes | 共11頁 | | |
|
產(chǎn)品購買
|