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IPA65R650CE
規(guī)格信息：

封裝/外殼：PG-TO220-3

Packing Type：TUBE

Moisture Level：NA

RDS (on) max：650.0m?

IDpuls max：18.0A

VDS max：650.0V

ID max：7.0A

Package：TO-220 FullPAK

Rth：4.5K/W

QG：23.0nC

Budgetary Price ?€/1k：0.48

Operating Temperature min：-40.0°C

Ptot max：28.0W

Polarity：N

Pin Count：3.0Pins

RthJA max：80.0K/W

Mounting：THT

VGS(th) min max：2.5V 3.5V

無(wú)鉛情況/RoHs：無(wú)鉛/符合RoHs

IPA65R650CE

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	產(chǎn)品購(gòu)買
IPA65R650CE	Metal Oxide Semiconductor Field Effect Transistor	INFINEON[Infineon Technologies AG]	1346.22 Kbytes	共17頁(yè)	產(chǎn)品購(gòu)買
IPA65R650CE	650V CoolMOSa?￠ CE Power Transistor	INFINEON[Infineon Technologies AG]	1164.48 Kbytes	共16頁(yè)	產(chǎn)品購(gòu)買
IPA65R650CE	isc N-Channel MOSFET Transistor	ISC[Inchange Semiconductor Company Limited]	316.05 Kbytes	共2頁(yè)	產(chǎn)品購(gòu)買
IPA65R650CE_15	Metal Oxide Semiconductor Field Effect Transistor	INFINEON[Infineon Technologies AG]	1346.22 Kbytes	共17頁(yè)	產(chǎn)品購(gòu)買
IPA65R650CE_16	650V CoolMOSa?￠ CE Power Transistor	INFINEON[Infineon Technologies AG]	1164.48 Kbytes	共16頁(yè)	產(chǎn)品購(gòu)買
IPA65R650CEXKSA1	MOSFET N-CH 650V TO-220-3	Infineon Technologies	1.18 Mbytes	共16頁(yè)	產(chǎn)品購(gòu)買
IPA65R650CEXKSA1	MOSFET N-Ch 650V TO-220FP-3	Infineon Technologies	1.47 Mbytes	共16頁(yè)	產(chǎn)品購(gòu)買