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FQD1N60 PDF文件_規(guī)格信息

FQD1N60
規(guī)格信息：

制造商:Fairchild Semiconductor

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:1 A

Vds-漏源極擊穿電壓:600 V

Rds On-漏源導(dǎo)通電阻:11.5 Ohms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :30 V

最大工作溫度:+ 150 C

Pd-功率耗散:2.5 W

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:DPAK-3

商標(biāo):Fairchild Semiconductor

通道模式:Enhancement

配置:Single

下降時(shí)間:25 ns

最小工作溫度:- 55 C

上升時(shí)間:25 ns

系列:FQD1N60

典型關(guān)閉延遲時(shí)間:7 ns

典型接通延遲時(shí)間:5 ns

FQD1N60

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
FQD1N60	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	549.28 Kbytes	共9頁		產(chǎn)品購買
FQD1N60	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	543.8 Kbytes	共9頁	STP4NM60,FQAF19N60,FQPF12N60,SSW2N60B,FCH47N60,FQP3N60C,STS1HNK60,FQB12N60,FQPF1N60,SSW4N60B	產(chǎn)品購買
FQD1N60C	N-Channel QFET?? MOSFET 600 V, 1.0 A, 11.5 ??	FAIRCHILD[Fairchild Semiconductor]	557.93 Kbytes	共9頁		產(chǎn)品購買
FQD1N60C	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	640.5 Kbytes	共9頁	STP4NM60,FQAF19N60,FQP7N60,SSW1N60B,FCP20N60,FCH47N60,FQP3N60C,STS1HNK60,FQB12N60,FQPF12N60	產(chǎn)品購買
FQD1N60C	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	758.35 Kbytes	共9頁		產(chǎn)品購買
FQD1N60C	600V N-Channel MOSFET	KERSEMI[Kersemi Electronic Co., Ltd.]	824.93 Kbytes	共8頁		產(chǎn)品購買
FQD1N60C	N-Channel QFET?? MOSFET 600 V, 1.0 A, 11.5 ??	FAIRCHILD[Fairchild Semiconductor]	557.93 Kbytes	共9頁		產(chǎn)品購買
FQD1N60C_09	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	758.35 Kbytes	共9頁		產(chǎn)品購買
FQD1N60CTM	N-Channel QFET?? MOSFET 600 V, 1.0 A, 11.5 ??	FAIRCHILD[Fairchild Semiconductor]	557.93 Kbytes	共9頁		產(chǎn)品購買
FQD1N60TF	MOSFET N-CH 600V 1A DPAK	ON Semiconductor	543.82 Kbytes	共9頁		產(chǎn)品購買
FQD1N60TM	600V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	549.28 Kbytes	共9頁		產(chǎn)品購買