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DMN2005LP4K
規(guī)格信息：

制造商:Diodes Incorporated

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:200 mA

Vds-漏源極擊穿電壓:20 V

Rds On-漏源導(dǎo)通電阻:1.5 Ohms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :10 V

最大工作溫度:+ 150 C

Pd-功率耗散:200 mW

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:DFN-3

商標(biāo):Diodes Incorporated

通道模式:Enhancement

配置:Single

最小工作溫度:- 65 C

系列:DMN2005L

DMN2005LP4K

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
DMN2005LP4K	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	242.4 Kbytes	共4頁	CEM2082,CEP09N6,CEP63A3,CEP3070,CED703AL,2N7002W_1,DMN2005K,CEM2108,CEM4282,CEM8208	產(chǎn)品購買
DMN2005LP4K	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	176.46 Kbytes	共4頁		產(chǎn)品購買
DMN2005LP4K_09	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	176.46 Kbytes	共4頁		產(chǎn)品購買
DMN2005LP4K_15	N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	442.29 Kbytes	共7頁		產(chǎn)品購買
DMN2005LP4K-7	N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	442.29 Kbytes	共7頁		產(chǎn)品購買
DMN2005LP4K-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	242.4 Kbytes	共4頁	CEM2082,CEP09N6,CEP63A3,CEP3070,CED703AL,2N7002W_1,DMN2005K,CEM2108,CEM4282,CEM8208	產(chǎn)品購買
DMN2005LP4K-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	176.46 Kbytes	共4頁		產(chǎn)品購買
DMN2005LP4K-7B	N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES[Diodes Incorporated]	442.29 Kbytes	共7頁		產(chǎn)品購買