制造商:Diodes Incorporated
產(chǎn)品種類:MOSFET
Id-連續(xù)漏極電流:200 mA
Vds-漏源極擊穿電壓:20 V
Rds On-漏源導(dǎo)通電阻:1.5 Ohms
晶體管極性:N-Channel
Vgs-柵源極擊穿電壓 :10 V
最大工作溫度:+ 150 C
Pd-功率耗散:350 mW
安裝風(fēng)格:SMD/SMT
封裝 / 箱體:DFN-6
商標(biāo):Diodes Incorporated
通道模式:Enhancement
配置:Dual
最小工作溫度:- 65 C
系列:DMN2005D
DMN2005DLP4K
| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買(mǎi) |
|---|---|---|---|---|---|---|---|---|---|
| DMN2005DLP4K | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES[Diodes Incorporated] | 243.69 Kbytes | 共4頁(yè) | CEM2108,CEM3128,CEM8208,CEM3138,CEM3178,CEM3258,2N7002V_1,CEM9926A,CEM4228,CEM9935A | 產(chǎn)品購(gòu)買(mǎi) | |||
| DMN2005DLP4K | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES[Diodes Incorporated] | 184.46 Kbytes | 共5頁(yè) | 產(chǎn)品購(gòu)買(mǎi) | ||||
| DMN2005DLP4K_09 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES[Diodes Incorporated] | 184.46 Kbytes | 共5頁(yè) | 產(chǎn)品購(gòu)買(mǎi) | ||||
| DMN2005DLP4K_15 | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES[Diodes Incorporated] | 102.43 Kbytes | 共5頁(yè) | 產(chǎn)品購(gòu)買(mǎi) | ||||
| DMN2005DLP4K-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES[Diodes Incorporated] | 243.69 Kbytes | 共4頁(yè) | CEM2108,CEM3128,CEM8208,CEM3138,CEM3178,CEM3258,2N7002V_1,CEM9926A,CEM4228,CEM9935A | 產(chǎn)品購(gòu)買(mǎi) | |||
| DMN2005DLP4K-7 | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES[Diodes Incorporated] | 184.46 Kbytes | 共5頁(yè) | 產(chǎn)品購(gòu)買(mǎi) |
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