������:Diodes Incorporated
�a(ch��n)Ʒ�N�(l��i):MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:SMD/SMT
���b / ���w:SOT-23-3
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:20 V
Id-�B�m(x��)©�O���:3.4 A
Rds On-©Դ��(d��o)ͨ���:72 mOhms
Vgs th-��Դ�O�ֵ늉�:400 mV
Vgs - �ŘO-Դ�O늉�:4.5 V
Qg-�ŘO늺�:3.8 nC
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:760 mW
����:Single
ͨ��ģʽ:Enhancement
���b:Cut Tape
���b:MouseReel
���b:Reel
ϵ��:DMN2046
���w���(l��i)��:1 N-Channel
�̘�(bi��o):Diodes Incorporated
�½��r(sh��)�g:34.1 ns
�a(ch��n)Ʒ�(l��i)��:MOSFET
�����r(sh��)�g:25.1 ns
���S���b��(sh��)��:3000
���(l��i)�e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:69.1 ns
���ͽ�ͨ���t�r(sh��)�g:6.7 ns
�����:8 mg