������:ON Semiconductor
�a(ch��n)Ʒ�N�:�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���b�L��:Through Hole
���b / ���w:TO-204-2
���w�ܘO��:NPN
����:Single
��늘O���l(f��)��O���늉� VCEO:60 V
��늘O�����O늉� VCBO:100 V
�l(f��)��O - ���O늉� VEBO:7 V
��늘O����O�늉�:1.4 V
���ֱ��늼�늘O���:20 A
���控���a(ch��n)ƷfT:200 kHz
��С�����ض�:- 65 C
������ض�:+ 150 C
ϵ��:2N3772
�߶�:8.51 mm (Max)
�L��:39.37 mm
���b:Tray
����:26.67 mm (Max)
�̘�:ON Semiconductor
��늘O�B�m(x��)���:20 A
ֱ����늘O/Base Gain hfe Min:15
Pd-���ʺ�ɢ:150 W
�a(ch��n)Ʒ���:BJTs - Bipolar Transistors
���S���b��(sh��)��:100
��e:Transistors
�����:11.567 g