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2N3767 PDF文件_規(guī)格信息

2N3767
規(guī)格信息：

制造商:Central Semiconductor

產(chǎn)品種類:雙極晶體管 - 雙極結型晶體管(BJT)

RoHS:是

技術:Si

安裝風格:Through Hole

封裝 / 箱體:TO-66-2

晶體管極性:NPN

配置:Single

集電極—發(fā)射極最大電壓 VCEO:80 V

集電極—基極電壓 VCBO:100 V

發(fā)射極 - 基極電壓 VEBO:6 V

集電極—射極飽和電壓:2.5 V

增益帶寬產(chǎn)品fT:10 MHz

最小工作溫度:- 65 C

最大工作溫度:+ 200 C

系列:2N3767

直流電流增益 hFE 最大值:160 at 500 mA, 5 V

封裝:Tube

商標:Central Semiconductor

集電極連續(xù)電流:4 A

直流集電極/Base Gain hfe Min:20 at 1 A, 10 V

Pd-功率耗散:25 W

產(chǎn)品類型:BJTs - Bipolar Transistors

工廠包裝數(shù)量:30

子類別:Transistors

零件號別名:2N3767 PBFREE

2N3767

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