������:International Rectifier
�a(ch��n)Ʒ�N�:MOSFET
Id-�B�m(x��)©�O���:25 A
Vds-©Դ�O����늉�:400 V
Rds On-©Դ��(d��o)ͨ���:200 mOhms
���w�ܘO��:N-Channel
Vgs-��Դ�O����늉� :20 V
������ض�:+ 150 C
Pd-���ʺ�ɢ:300 W
���b�L(f��ng)��:Through Hole
���b / ���w:TO-259AA-3
�̘�(bi��o):International Rectifier
ͨ��ģʽ:Enhancement
����:Single
�½��r(sh��)�g:99 ns
��С�����ض�:- 55 C
�����r(sh��)�g:140 ns
�����P(gu��n)�]���t�r(sh��)�g:120 ns
���ͽ�ͨ���t�r(sh��)�g:33 ns