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IRF530N PDF文件_規(guī)格信息

IRF530N
規(guī)格信息：

制造商:NXP

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:17 A

Vds-漏源極擊穿電壓:100 V

Rds On-漏源導(dǎo)通電阻:110 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :20 V

最大工作溫度:+ 175 C

Pd-功率耗散:79 W

安裝風(fēng)格:Through Hole

封裝 / 箱體:TO-220-3

商標(biāo):NXP Semiconductors

通道模式:Enhancement

配置:Single

下降時(shí)間:12 ns

最小工作溫度:- 55 C

上升時(shí)間:36 ns

工廠包裝數(shù)量:50

典型關(guān)閉延遲時(shí)間:18 ns

典型接通延遲時(shí)間:6 ns

IRF530N

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關(guān)型號	產(chǎn)品購買
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