豆豆小说阅读网,小说

IPS65R600E6
規(guī)格信息：

封裝/外殼：PG-TO251-3

Packing Type：TUBE

RDS (on) max：600.0m?

IDpuls max：18.0A

VDS max：650.0V

ID max：7.3 A

RthJC max：2.0 K/W

QG (typ @10V)：23.0 nC

Package：IPAK SL (TO-251 SL)

Operating Temperature min max：-55.0 °C 150.0 °C

Budgetary Price ?€/1k：0.47

Ptot max：63.0W

Polarity：N

Pin Count：3.0 Pins

RthJA max：62.0K/W

VGS(th) min max：2.5 V 3.5 V

Mounting：THT

無鉛情況/RoHs：無鉛/符合RoHs

IPS65R600E6

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	產(chǎn)品購(gòu)買
IPS65R600E6	Metal Oxide Semiconductor Field Effect Transistor	INFINEON[Infineon Technologies AG]	1751.21 Kbytes	共15頁(yè)	產(chǎn)品購(gòu)買
IPS65R600E6_15	Metal Oxide Semiconductor Field Effect Transistor	INFINEON[Infineon Technologies AG]	1751.21 Kbytes	共15頁(yè)	產(chǎn)品購(gòu)買
IPS65R600E6AKMA1	MOSFET LOW POWER_LEGACY	Infineon Technologies	898.42 Kbytes	共13頁(yè)	產(chǎn)品購(gòu)買
IPS65R600E6AKMA1	MOSFET N-CH 650V 7.3A TO251-3	Infineon Technologies	1.16 Mbytes	共14頁(yè)	產(chǎn)品購(gòu)買
IPS65R600E6AKMA1	PFET, 650V, 0.6OHM, 1-ELEMENT, N	Infineon Technologies	1.16 Mbytes	共14頁(yè)	產(chǎn)品購(gòu)買