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IPS65R1K5CE
規(guī)格信息：

封裝/外殼：PG-TO251-3

Packing Type：TUBE

Moisture Level：NA

RDS (on) max：1500.0m?

IDpuls max：8.3A

VDS max：650.0V

ID max：3.1A

Package：IPAK SL (TO-251 SL)

Rth：4.4K/W

QG：10.5nC

Budgetary Price ?€/1k：0.17

Ptot max：28.0W

Polarity：N

Pin Count：3.0Pins

Operating Temperature min max：-40.0°C 150.0°C

RthJA max：62.0K/W

Mounting：THT

VGS(th) min max：2.5V 3.5V

無(wú)鉛情況/RoHs：無(wú)鉛/符合RoHs

IPS65R1K5CE

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	產(chǎn)品購(gòu)買(mǎi)
IPS65R1K5CE	650V CoolMOS?a CE Power Transistor	INFINEON[Infineon Technologies AG]	1161.15 Kbytes	共14頁(yè)	產(chǎn)品購(gòu)買(mǎi)
IPS65R1K5CE	Very high commutation ruggedness	INFINEON[Infineon Technologies AG]	1776.96 Kbytes	共15頁(yè)	產(chǎn)品購(gòu)買(mǎi)
IPS65R1K5CE_16	650V CoolMOS?a CE Power Transistor	INFINEON[Infineon Technologies AG]	1161.15 Kbytes	共14頁(yè)	產(chǎn)品購(gòu)買(mǎi)
IPS65R1K5CEAKMA1	MOSFET N-CH 650V TO-251-3	Infineon Technologies	1.13 Mbytes	共14頁(yè)	產(chǎn)品購(gòu)買(mǎi)
IPS65R1K5CEAKMA1	MOSFET N-CH 650V 3.1A TO251	Infineon Technologies	1.13 Mbytes	共14頁(yè)	產(chǎn)品購(gòu)買(mǎi)