| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
| IPP600N25N3 | N-Channel MOSFET Transistor | ISC[Inchange Semiconductor Company Limited] | ![ISC[Inchange Semiconductor Company Limited]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/572ISC.GIF) | 338.89 Kbytes | 共2頁 |  | |
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| IPP600N25N3 G | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | Infineon Technologies |  | 629.81 Kbytes | 共11頁 |  | |
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| IPP600N25N3 G | 連續(xù)漏極電流(Id)(25°C 時):25A(Tc) 漏源電壓(Vdss):250V 柵源極閾值電壓:4V @ 90uA 漏源導通電阻:60mΩ @ 25A,10V 最大功率耗散(Ta=25°C):136W(Tc) 類型:N溝道 | Infineon(英飛凌) |  | 689.17 Kbytes | 共11頁 |  | |
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產(chǎn)品購買
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| IPP600N25N3G | OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 426.96 Kbytes | 共11頁 |  | |
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產(chǎn)品購買
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| IPP600N25N3G | OptiMOS3 Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 737.83 Kbytes | 共11頁 |  | |
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產(chǎn)品購買
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| IPP600N25N3G | OptiMOSTM3 Power-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/211INFINEON.GIF) | 694.82 Kbytes | 共11頁 |  | |
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產(chǎn)品購買
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| IPP600N25N3GXKSA1 | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | Infineon Technologies |  | 629.81 Kbytes | 共11頁 |  | |
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產(chǎn)品購買
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| IPP600N25N3GXKSA1 | MOSFET N-CH 250V 25A TO220-3 | Infineon Technologies |  | 689.17 Kbytes | 共11頁 |  | |
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產(chǎn)品購買
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