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FQP8N80C
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��:ON Semiconductor

�a(ch��n)Ʒ�N�:MOSFET

RoHS:��

��g(sh��):Si

��b�L(f��ng)��:Through Hole

��b / ��w:TO-220-3

ͨ��(sh��)��:1 Channel

��w�ܘO��:N-Channel

Vds-©Դ�O��늉�:800 V

Id-�B�m(x��)©�O��:8 A

Rds On-©Դ��(d��o)ͨ��:1.55 Ohms

Vgs - �ŘO-Դ�O늉�:30 V

��С��ض�:- 55 C

��ض�:+ 150 C

Pd-��ʺ�ɢ:178 W

��:Single

ͨ��ģʽ:Enhancement

�̘�(bi��o)��:QFET

��b:Tube

�߶�:16.3 mm

�L��:10.67 mm

ϵ��:FQP8N80C

��w��:1 N-Channel

��:MOSFET

��:4.7 mm

�̘�(bi��o):ON Semiconductor / Fairchild

��猧(d��o) - ��Сֵ:5.6 S

�½��r�g:70 ns

�a(ch��n)Ʒ��:MOSFET

��r�g:110 ns

��S��b��(sh��)��:1000

��e:MOSFETs

��P(gu��n)�]��t�r�g:65 ns

��ͽ�ͨ��t�r�g:40 ns

��̖�e��:FQP8N80C_NL

��λ��:1.800 g

FQP8N80C

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FQP8N80C	800V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	1296.41 Kbytes	��10�		�a(ch��n)Ʒُ�I
FQP8N80C	800V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	906.79 Kbytes	��10�	STW12NK80Z,FQAF10N80,FQP5N80,FQA10N80C,STP4NC80Z,FQAF13N80,FQP6N80,STW18NK80Z,FQP3N80C,STP4NC80ZFP	�a(ch��n)Ʒُ�I
FQP8N80C	8.0A,800V Heatsink Planar N-Channel Power MOSFET	THINKISEMI[Thinki Semiconductor Co., Ltd.]	2549.25 Kbytes	��8�		�a(ch��n)Ʒُ�I
FQP8N80C_09	800V N-Channel MOSFET	FAIRCHILD[Fairchild Semiconductor]	1285.64 Kbytes	��12�		�a(ch��n)Ʒُ�I