������:Diodes Incorporated
�a(ch��n)Ʒ�N�(l��i):MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:SMD/SMT
���b / ���w:X4-DSN3415-10
ͨ����(sh��)��:2 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:30 V
Id-�B�m(x��)©�O���:14.6 A
Rds On-©Դ��(d��o)ͨ���:6.1 mOhms, 6.1 mOhms
Vgs th-��Դ�O�ֵ늉�:1.3 V
Vgs - �ŘO-Դ�O늉�:20 V
Qg-�ŘO늺�:31.3 nC, 31.3 nC
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:2.7 W
����:Dual
ͨ��ģʽ:Enhancement
���b:Reel
���w���(l��i)��:2 N-Channel
�̘�(bi��o):Diodes Incorporated
�½��r(sh��)�g:858 ns, 858 ns
�a(ch��n)Ʒ�(l��i)��:MOSFET
�����r(sh��)�g:314 ns, 314 ns
���S���b��(sh��)��:3000
���(l��i)�e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:928 ns, 928 ns
���ͽ�ͨ���t�r(sh��)�g:186 ns, 186 ns