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DMN2114SN
規(guī)格信息：

制造商:Diodes Incorporated

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:1.2 A

Vds-漏源極擊穿電壓:20 V

Rds On-漏源導通電阻:100 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :12 V

最大工作溫度:+ 150 C

Pd-功率耗散:500 mW

安裝風格:SMD/SMT

封裝 / 箱體:SOT-23-3

商標:Diodes Incorporated

通道模式:Enhancement

配置:Single

下降時間:15 ns

最小工作溫度:- 55 C

上升時間:15 ns

系列:DMN2114S

典型關閉延遲時間:50 ns

典型接通延遲時間:10 ns

DMN2114SN

型號	功能描述	生產(chǎn)廠商	PDF大小	PDF頁數(shù)	相關型號	產(chǎn)品購買
DMN2114SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	204.91 Kbytes	共4頁	CEM2082,CEP09N6,CEP63A3,CEP3070,CED703AL,2N7002W_1,DMN2005K,CEM2108,CEM4282,CEM8208	產(chǎn)品購買
DMN2114SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	155.66 Kbytes	共4頁		產(chǎn)品購買
DMN2114SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	TYSEMI[TY Semiconductor Co., Ltd]	115.66 Kbytes	共1頁		產(chǎn)品購買
DMN2114SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	ZPSEMI[ZP Semiconductor]	86.54 Kbytes	共1頁		產(chǎn)品購買
DMN2114SN_0709	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	155.66 Kbytes	共4頁		產(chǎn)品購買
DMN2114SN_15	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	96.66 Kbytes	共4頁		產(chǎn)品購買
DMN2114SN-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	204.91 Kbytes	共4頁	CEM2082,CEP09N6,CEP63A3,CEP3070,CED703AL,2N7002W_1,DMN2005K,CEM2108,CEM4282,CEM8208	產(chǎn)品購買
DMN2114SN-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	155.66 Kbytes	共4頁		產(chǎn)品購買