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DMN2112SN PDF文件_規(guī)格信息

DMN2112SN
規(guī)格信息：

制造商:Diodes Incorporated

產(chǎn)品種類:MOSFET

Id-連續(xù)漏極電流:1.2 A

Vds-漏源極擊穿電壓:20 V

Rds On-漏源導(dǎo)通電阻:100 mOhms

晶體管極性:N-Channel

Vgs-柵源極擊穿電壓 :8 V

最大工作溫度:+ 150 C

Pd-功率耗散:500 mW

安裝風(fēng)格:SMD/SMT

封裝 / 箱體:SOT-23-3

商標(biāo):Diodes Incorporated

通道模式:Enhancement

配置:Single

下降時(shí)間:15 ns

最小工作溫度:- 55 C

上升時(shí)間:15 ns

系列:DMN2112S

典型關(guān)閉延遲時(shí)間:75 ns

典型接通延遲時(shí)間:10 ns

DMN2112SN

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	相關(guān)型號(hào)	產(chǎn)品購(gòu)買
DMN2112SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	228.88 Kbytes	共3頁(yè)	CEM2082,CEP09N6,CEP63A3,CEP3070,CED703AL,2N7002W_1,DMN2005K,CEM2108,CEM4282,CEM8208	產(chǎn)品購(gòu)買
DMN2112SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	222.41 Kbytes	共4頁(yè)		產(chǎn)品購(gòu)買
DMN2112SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	TYSEMI[TY Semiconductor Co., Ltd]	163.49 Kbytes	共1頁(yè)		產(chǎn)品購(gòu)買
DMN2112SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	ZPSEMI[ZP Semiconductor]	84.09 Kbytes	共1頁(yè)		產(chǎn)品購(gòu)買
DMN2112SN	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	441.77 Kbytes	共5頁(yè)		產(chǎn)品購(gòu)買
DMN2112SN_0711	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	222.41 Kbytes	共4頁(yè)		產(chǎn)品購(gòu)買
DMN2112SN_15	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	216.69 Kbytes	共5頁(yè)		產(chǎn)品購(gòu)買
DMN2112SN_17	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	441.77 Kbytes	共5頁(yè)		產(chǎn)品購(gòu)買
DMN2112SN-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	228.88 Kbytes	共3頁(yè)	CEM2082,CEP09N6,CEP63A3,CEP3070,CED703AL,2N7002W_1,DMN2005K,CEM2108,CEM4282,CEM8208	產(chǎn)品購(gòu)買
DMN2112SN-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES[Diodes Incorporated]	441.77 Kbytes	共5頁(yè)		產(chǎn)品購(gòu)買