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BSM50GD120DN2
規(guī)格信息：

制造商:Infineon

產(chǎn)品種類:IGBT 模塊

RoHS:是

產(chǎn)品:IGBT Silicon Modules

配置:Hex

集電極—發(fā)射極最大電壓 VCEO:1200 V

集電極—射極飽和電壓:2.5 V

在25 C的連續(xù)集電極電流:72 A

柵極—射極漏泄電流:200 nA

Pd-功率耗散:350 W

封裝 / 箱體:EconoPACK 2A

最小工作溫度:- 40 C

最大工作溫度:+ 150 C

封裝:Tray

高度:17 mm

長(zhǎng)度:107.5 mm

寬度:45 mm

商標(biāo):Infineon Technologies

安裝風(fēng)格:Chassis Mount

柵極/發(fā)射極最大電壓:20 V

產(chǎn)品類型:IGBT Modules

工廠包裝數(shù)量:10

子類別:IGBTs

零件號(hào)別名:BSM50GD120DN2BOSA1 SP000100359

型號(hào)	功能描述	生產(chǎn)廠商	PDF大小	PDF頁(yè)數(shù)	相關(guān)型號(hào)	產(chǎn)品購(gòu)買(mǎi)
BSM50GD120DN2	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)	SIEMENS[Siemens Semiconductor Group]	126.6 Kbytes	共9頁(yè)	BSM150GT120DN2,BSM15GD120D2,BSM15GD60DN2,BSM200GT120DN2,BSM25GD120D2,BSM35GD120D2,BSM50GD120DN2E3226,BSM50GD120DN2G,BSM50GD60DN2,BSM50GD60DN2E3226	產(chǎn)品購(gòu)買(mǎi)
BSM50GD120DN2E3226	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)	SIEMENS[Siemens Semiconductor Group]	132.73 Kbytes	共9頁(yè)	BSM100GB170DN2,BSM100GT120DN2,BSM150GB120DN2,BSM150GB170DN2,BSM200GB120DN2,BSM25GAL120DN2,BSM25GB120DN2,BSM400GB60DN2,BSM50GAL120DN2,BSM50GB120DN2	產(chǎn)品購(gòu)買(mǎi)
BSM50GD120DN2G	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)	SIEMENS[Siemens Semiconductor Group]	182.91 Kbytes	共9頁(yè)	BSM150GT120DN2,BSM15GD120D2,BSM15GD60DN2,BSM200GT120DN2,BSM25GD120D2,BSM35GD120D2,BSM50GD120DN2,BSM50GD120DN2E3226,BSM50GD60DN2,BSM50GD60DN2E3226	產(chǎn)品購(gòu)買(mǎi)