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BSM150GAL120DN2
規(guī)格信息：

制造商:Infineon

產(chǎn)品種類:IGBT 模塊

RoHS:否

商標(biāo):Infineon Technologies

產(chǎn)品:IGBT Silicon Modules

配置:Half Bridge

集電極—發(fā)射極最大電壓 VCEO:1200 V

集電極—射極飽和電壓:2.5 V

在25 C的連續(xù)集電極電流:210 A

柵極—射極漏泄電流:400 nA

最大工作溫度:+ 150 C

封裝 / 箱體:Half Bridge GAL 2

柵極/發(fā)射極最大電壓:20 V

安裝風(fēng)格:Screw

Pd-功率耗散:1.25 kW

工廠包裝數(shù)量:500

型號(hào)	功能描述	生產(chǎn)廠商	廠商LOGO	PDF大小	PDF頁數(shù)	PDF文件	相關(guān)型號(hào)	第一頁預(yù)覽	產(chǎn)品購買
BSM150GAL120DN2	IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)	SIEMENS[Siemens Semiconductor Group]		81.21 Kbytes	共5頁		BSM100GAL120DN2,BSM150GAL120DN2E3166,BSM25GAL120DN2,BSM50GAL120DN2,BSM75GAL120DN2,BSM300GA120DN2E3166,BSM100GT120DN2,BSM100GB170DN2,BSM150GB120DN2,BSM400GA120DL		產(chǎn)品購買
BSM150GAL120DN2E3166	IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)	SIEMENS[Siemens Semiconductor Group]		80.48 Kbytes	共5頁		BSM100GAL120DN2,BSM150GAL120DN2,BSM25GAL120DN2,BSM50GAL120DN2,BSM75GAL120DN2,BSM300GA120DN2E3166,BSM100GT120DN2,BSM100GB170DN2,BSM150GB120DN2,BSM400GA120DL		產(chǎn)品購買