| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關型號 | 第一頁預覽 | 產(chǎn)品購買 |
| BSH111 | N-channel enhancement mode field-effect transistor | PHILIPS[NXP Semiconductors] | ![PHILIPS[NXP Semiconductors]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/117PHILIPS.GIF) | 115.78 Kbytes | 共13頁 |  | PHP45N03LTA,PSMN165-200K,PH1955L,PHP47NQ10T,SI2302DS,PHP54N06T,SI2304DS,PSMN008-75P,PSMN002-25P,PHP55N03LTA |
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產(chǎn)品購買
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| BSH111 | N-channel enhancement mode field-effect transistor | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/975TYSEMI.GIF) | 171.08 Kbytes | 共2頁 |  | |
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| BSH111,215 | MOSFET N-CH 55V 335MA TO236AB | Nexperia USA Inc. |  | 281.62 Kbytes | 共13頁 |  | |
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產(chǎn)品購買
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| BSH111,215 | MOSFET N-CH 55V 335MA TO236AB | NXP USA Inc. |  | 281.62 Kbytes | 共13頁 |  | |
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產(chǎn)品購買
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| BSH111,235 | MOSFET N-CH 55V 335MA TO236AB | Nexperia USA Inc. |  | 281.62 Kbytes | 共13頁 |  | |
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產(chǎn)品購買
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| BSH111BK | 55 V, N-channel Trench MOSFET | NEXPERIA[Nexperia B.V. All rights reserved] | ![NEXPERIA[Nexperia B.V. All rights reserved]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1325NEXPERIA.GIF) | 742.71 Kbytes | 共16頁 |  | |
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| BSH111BK215 | SMALL SIGNAL N-CHANNEL MOSFET | NXP USA Inc. |  | 736.72 Kbytes | 共16頁 |  | |
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產(chǎn)品購買
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| BSH111BKR | MOSFET 55V N-channel Trench MOSFET | Nexperia |  | 735.76 Kbytes | 共16頁 |  | |
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產(chǎn)品購買
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| BSH111BKR | MOSFET N-CH 55V 210MA TO236AB | Nexperia USA Inc. |  | 736.72 Kbytes | 共16頁 |  | |
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| BSH111BKR | 連續(xù)漏極電流(Id)(25°C 時):210mA 漏源電壓(Vdss):55V 柵源極閾值電壓:1.3V @ 250uA 漏源導通電阻:4Ω @ 200mA,4.5V 最大功率耗散(Ta=25°C):302mW 類型:N溝道 | Nexperia(安世) |  | 736.72 Kbytes | 共16頁 |  | |
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產(chǎn)品購買
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