| 型號 | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁數(shù) | PDF文件 | 相關(guān)型號 | 第一頁預(yù)覽 | 產(chǎn)品購買 |
| BSH108 | N-channel enhancement mode field-effect transistor | PHILIPS[NXP Semiconductors] | ![PHILIPS[NXP Semiconductors]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/117PHILIPS.GIF) | 318.39 Kbytes | 共13頁 |  | PHP45N03LTA,PSMN165-200K,BSH111,PH1955L,PHP47NQ10T,SI2302DS,PSMN008-75P,PSMN002-25P,PHP54N06T,SI2304DS |
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| BSH108 | N-channel enhancement mode field-effect transistor Very fast switching | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/975TYSEMI.GIF) | 221.87 Kbytes | 共2頁 | | |
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| BSH108 | N-channel enhancement mode field-effect transistor | ZPSEMI[ZP Semiconductor] | ![ZPSEMI[ZP Semiconductor]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1034ZPSEMI.GIF) | 265.23 Kbytes | 共2頁 | | |
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| BSH108 | N-channel enhancement mode field-effect transistor | TYSEMI[TY Semiconductor Co., Ltd] | | 206.38 Kbytes | 共2頁 | | |
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| BSH108,215 | MOSFET TAPE7 PWR-MO | Nexperia |  | 249.93 Kbytes | 共14頁 | | |
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| BSH108,215 | MOSFET N-CH 30V 1.9A SOT23 | Nexperia USA Inc. | | 414.32 Kbytes | 共14頁 | | |
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| BSH108,215 | 連續(xù)漏極電流（Id）（25°C 時）：1.9A(Tsp) 漏源電壓（Vdss）：30V 柵源極閾值電壓：2V @ 1mA 漏源導(dǎo)通電阻：120mΩ @ 1A,10V 最大功率耗散（Ta=25°C）：830mW(Tsp) 類型：N溝道 | Nexperia(安世) | | 414.32 Kbytes | 共14頁 | | |
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產(chǎn)品購買
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