| 型號(hào) | 功能描述 | 生產(chǎn)廠商 | 廠商LOGO | PDF大小 | PDF頁(yè)數(shù) | PDF文件 | 相關(guān)型號(hào) | 第一頁(yè)預(yù)覽 | 產(chǎn)品購(gòu)買(mǎi) |
| BSH103 | N-channel enhancement mode MOS transistor | PHILIPS[NXP Semiconductors] | ![PHILIPS[NXP Semiconductors]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/117PHILIPS.GIF) | 96.52 Kbytes | 共12頁(yè) |  | BSH104,PHN205,STD8N10L,STH12N60,BSH105,BSH106,BSH107,STP4NA90,STP6N50,TSD4M150 |
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| BSH103 | N-channel enhancement mode MOS transistor | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/975TYSEMI.GIF) | 152.11 Kbytes | 共3頁(yè) |  | |
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| BSH103 | N-Channel 30-V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO-天天IC網(wǎng)](https://cache.ttic.cc/PdfSupLogo/1345VBSEMI.GIF) | 1855.93 Kbytes | 共9頁(yè) |  | |
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| BSH103,215 | MOSFET N-CH 30V 0.85A | Nexperia |  | 193.89 Kbytes | 共13頁(yè) |  | |
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| BSH103,215 | MOSFET N-CH 30V 850MA TO236AB | Nexperia USA Inc. |  | 193.37 Kbytes | 共13頁(yè) |  | |
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| BSH103,215 | 連續(xù)漏極電流(Id)(25°C 時(shí)):850mA(Ts=80°C) 漏源電壓(Vdss):30V 柵源極閾值電壓:400mV @ 1mA(最小) 漏源導(dǎo)通電阻:500mΩ @ 500mA,2.5V 最大功率耗散(Ta=25°C):500mW(Ts=80°C) 類(lèi)型:N溝道 | Nexperia(安世) |  | 193.37 Kbytes | 共13頁(yè) |  | |
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| BSH103,235 | MOSFET TAPE13 MOSFET | Nexperia |  | 193.89 Kbytes | 共13頁(yè) |  | |
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| BSH103,235 | MOSFET N-CH 30V 0.85A SOT23 | Nexperia USA Inc. |  | 193.37 Kbytes | 共13頁(yè) |  | |
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| BSH103,235 | 連續(xù)漏極電流(Id)(25°C 時(shí)):850mA 漏源電壓(Vdss):30V 柵源極閾值電壓:400mV @ 1mA(最小) 漏源導(dǎo)通電阻:400mΩ @ 500mA,4.5V 最大功率耗散(Ta=25°C):540mW 類(lèi)型:N溝道 | Nexperia(安世) |  | 193.37 Kbytes | 共13頁(yè) |  | |
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| BSH103BKR | BSH103BK - 30 V, N-CHANNEL TRENC | Nexperia USA Inc. |  | 283.32 Kbytes | 共13頁(yè) |  | |
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