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2N3637
規(guī)格信息:

制造商:Microchip

產(chǎn)品種類:雙極晶體管 - 雙極結(jié)型晶體管(BJT)

RoHS:

技術(shù):Si

安裝風(fēng)格:Through Hole

封裝 / 箱體:TO-39-3

晶體管極性:PNP

配置:Single

集電極—發(fā)射極最大電壓 VCEO:175 V

集電極—基極電壓 VCBO:175 V

發(fā)射極 - 基極電壓 VEBO:5 V

集電極—射極飽和電壓:300 mV

最大直流電集電極電流:1 A

最小工作溫度:- 65 C

最大工作溫度:+ 200 C

直流電流增益 hFE 最大值:150 at 50 mA, 10 VDC

封裝:Bulk

商標(biāo):Microchip / Microsemi

直流集電極/Base Gain hfe Min:50 at 50 mA, 10 VDC

Pd-功率耗散:1 W

產(chǎn)品類型:BJTs - Bipolar Transistors

工廠包裝數(shù)量:1

子類別:Transistors

介紹圖2N3637
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