������:ON Semiconductor
�a(ch��n)Ʒ�N�(l��i):MOSFET
RoHS:��
���g(sh��):Si
���b�L(f��ng)��:Through Hole
���b / ���w:TO-3PN-3
ͨ����(sh��)��:1 Channel
���w�ܘO��:N-Channel
Vds-©Դ�O����늉�:400 V
Id-�B�m(x��)©�O���:23 A
Rds On-©Դ��(d��o)ͨ���:190 mOhms
Vgs - �ŘO-Դ�O늉�:30 V
��С�����ض�:- 55 C
������ض�:+ 150 C
Pd-���ʺ�ɢ:235 W
����:Single
ͨ��ģʽ:Enhancement
�̘�(bi��o)��:UniFET
���b:Tube
�߶�:20.1 mm
�L(zh��ng)��:16.2 mm
ϵ��:FDA24N40F
���w���(l��i)��:1 N-Channel
����:5 mm
�̘�(bi��o):ON Semiconductor / Fairchild
�½��r(sh��)�g:75 ns
�a(ch��n)Ʒ�(l��i)��:MOSFET
�����r(sh��)�g:92 ns
���S���b��(sh��)��:450
���(l��i)�e:MOSFETs
�����P(gu��n)�]���t�r(sh��)�g:120 ns
���ͽ�ͨ���t�r(sh��)�g:40 ns
�����:6.401 g