������:Diodes Incorporated
�a(ch��n)Ʒ�N�:�p�O���w�� - �p�O�Y(ji��)�;��w��(BJT)
RoHS:��
���b�L(f��ng)��:SMD/SMT
���b / ���w:SOT-26-6
���w�ܘO��:PNP
����:Dual
��늘O���l(f��)��O���늉� VCEO:- 150 V
��늘O�����O늉� VCBO:- 160 V
�l(f��)��O - ���O늉� VEBO:- 5 V
��늘O����O�늉�:- 500 mV
���ֱ��늼�늘O���:- 200 mA
���控���a(ch��n)ƷfT:300 MHz
��С�����ض�:- 55 C
������ض�:+ 150 C
ϵ��:DMMT5401
�߶�:1.1 mm
�L��:3 mm
���b:Cut Tape
���b:MouseReel
���b:Reel
����:1.6 mm
�̘�(bi��o):Diodes Incorporated
ֱ����늘O/Base Gain hfe Min:50 at - 1 mA, - 5 V
Pd-���ʺ�ɢ:300 mW
�a(ch��n)Ʒ���:BJTs - Bipolar Transistors
���S���b��(sh��)��:3000
��e:Transistors
�����:30 mg